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| ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m PD = 1.5W Complementary part number ZXTP07012EFF Description This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. C B Features * * * * Low profile SOT23F package Low saturation voltage High gain High power dissipation E E C B Pinout - top view Applications * * * * LED driver Boost converter Logic interface Motor drive Ordering information Device ZXTN07012EFFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1D3 Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN07012EFF Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range PD Tj, Tstg PD PD PD Symbol VCBO VCEO VECO VEBO IC IB ICM Limit 20 12 3 7 4.5 1 10 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 - 55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 149 93 83 60 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN07012EFF Characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN07012EFF Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Symbol BVCBO BVCEO BVEBO BVECX BVECO Min. 20 12 7 6 3.0 Typ. 40 17 8.3 8.2 5.3 <1 <1 25 60 50 105 215 Base-emitter saturation voltage VBE(sat) 945 850 500 400 330 140 Transition frequency Input capacitance Output capacitance Delay time Rise time Storage time Fall time fT Cibo CObo td tr ts tf 150 800 650 530 230 220 229 40 26.8 14.2 250 67.7 300 s; duty cycle 2%. Max. Unit Conditions V V V V V IC = 100 A IC = 10mA (*) IE = 100 A IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100 A, VCB = 16V VCB = 16V, Tamb= 100C VEB = 5.6V IC = 100mA, IB = 0.5mA(*) IC = 1A, IB = 10mA(*) IC = 1A, IB = 100mA(*) IC = 2A, IB = 20mA(*) IC = 4.5A, IB = 45mA(*) IC = 4.5A, IB = 45mA(*) IC = 4.5A, VCE = 2V(*) IC = 0.1A, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 4.5A, VCE = 2V(*) IC = 10A, VCE = 2V(*) MHz IC = 50mA, VCE = 5V f = 50MHz pF VEB = 0.5V, f = 1MHz(*) VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. Collector-base cut-off current ICBO Emitter-base cut-off current Collector-emitter saturation voltage IEBO VCE(sat) 50 20 50 40 85 70 150 320 1050 950 1500 nA A nA mV mV mV mV mV mV mV Base-emitter turn-on voltage VBE(on) Static forward current transfer ratio hFE 50 pF ns ns ns ns NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN07012EFF Typical characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN07012EFF Package outline - SOT23F D b b L1 L c e1 e E1 E E2 b R A A1 Dim. A A1 b c D e e1 Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00 Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787 Dim. E E1 E2 L L1 R O Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0 Max. 2.50 1.70 1.26 0.68 0.50 0.15 12 Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0 Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12 0.95 ref 0.0374 ref Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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